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1）Basically used for vacuum sealing, the materials are FKM, FKM-GF, FFKM.
2）In the TF, ETCH, and Diff processes of electronic panels made into FPD, the sealing applications of various vacuum pumps, pipeline connection KF/ISO flanges, vacuum valves (pendulum valves, slit valve doors, etc.) meet the requirements of resistance to various corrosive gases and cleanliness.
| FPD process category | Process | Temperature | Working conditions |
| TF | CVD | 70~200℃ | Cl2, O2, SF6, SO2, NF3, BCl3, C2HF5, H2, CHF3, Ar,Cl2, SF6, O2, C2HF, BCl3, CF4 |
| PVD | SiH4, NH3, PH3, N2, NF3, Ar, Ph3, H2, N2O | ||
| ETCH | Dry Etching | 25~150℃ | TMAH, Photo Resists |
| Wet Etching | H3PO3, HNO3, CH3COOH, NaOH | ||
| Diff | lon lmplantation | 25~200℃ | SC-1, SC-2,, Alkaline, HF，Cl2, SF6, O2, C2HF, BCl3, CF4 |
| Diffusion | Monoethanol amine (MEA) |
3）In the plasma processes, thermal processes and wet processes of semiconductor wafer manufacturing, various vacuum acquisition equipment, vacuum coating equipment, cleaning equipment, vacuum valves, KF/ISO vacuum flanges, gate valve seals and other applications require resistance to various types of corrosive gases, plasma, high temperature and long service life, and also require sealing rings with high purity, low particle, low outgassing (low weight-loss), low trace metal levels, etc.
| Wafer process category | Process | Temperature | Working conditions |
| Plasma Processes | Etch | 25~200℃ | Cl2，BCl3,NF3,CHF3,HBr,C2F6,O2,CCl4,N2H2,SF6,SiCl4,,N2O,NF3 |
| DieletricEtch | 25~200℃ | C2F6,H2,O2,NF3,CHF3,CF4,CHF3,SF6 | |
| PECVD | 25~300℃ | TMS,TEP,DEMS,TEOS,SiH4,NH3, | |
| HDPCVD | SiF4,C3H6,O2,NF3 | ||
| Ashing/Stripping | 25~250℃ | O2,CF4,CHF3,NH3 | |
| Thermal Processes | SACVD | 25~300℃ | TEP, TEBO, TEOS, NF3, NH3，O3,O2,N2 |
Metal CVD & ALD LPCVD | 25~300℃ | Organic precursors, WF6, SiH6, TMA, DMAH,TiCl4,SiH4,HF,Cl2，SiH2Cl3,ClF3,NF3，H2O Vapour,O2,O3 | |
| Lamp annealer RTP | 150~300℃ | IR radiaion,O2,Steam | |
| Oxidation diffusion | 150~300℃ | N2, O2, H2O, HCl, Cl2,B2H6,PH3,BBr3,POCl3 | |
| UV cure | 150~300℃ | N2, O2,O3,Ar | |
| Thermal-ALD | 150~300℃ | TEOS, SiH4, NH3, SiF4, CF4,NF3 | |
| Wet Processes | Wafer Prep | 25~125℃ | SC1, SC2, SPM, HF, UPDI |
| CMP | 25~100℃ | KOH, NH3, UPDI | |
| Photolithography | 125~125℃ | TMAH, NaOH, H2SO4+Oxidant,Organic acids,NMP,Amines | |
| Stripping | 25~125℃ | NMP, MEA, HDMS, DMSO | |
| Cleaning/ Etching | 25~180℃ | HCl, HNO3, H3PO4, HF, UPDI ,SC1,SC2,O3 | |
| Copper Plating | 25~100℃ | CuSO4, H2SO4, H2O2 |
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